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| PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ISSUE 1 - JANUARY 1997 FEATURES * VCEO= -25V * 4 Amp Continuous Current * 10 Amp Pulse Current * Low Saturation voltage * High Gain FZT1149A C E C B ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Base Current Power Dissipation at T amb=25C Operating and Storage Temperature Range SYMBOL V CBO V CEO V EBO I CM IC IB P tot T j:T stg VALUE -30 -25 -5 -10 -4 -500 2.5 -55 to +150 SOT223 UNIT V V V A A mA W C The power which can be dissipated assuming the device is mounted in a typical manner on a P.C.B. with copper equal to 2 inches x 2 inches FZT1149A ELECTRICAL CHARACTERISTICS (at Tamb = 25C ). VALUE PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Breakdown Voltage SYMBOL MIN. V(BR)CBO VCES VCEO VCEV -30 -25 -25 -25 -5 TYP. -70 -60 -60 -60 -8.5 -0.3 -0.3 -0.3 -45 -100 -140 -170 -230 -960 -860 270 250 195 115 450 400 320 190 50 135 50 150 270 -100 -100 -100 -80 -170 -240 -260 -350 -1050 -1000 MAX. UNIT V V V V V nA nA nA mV mV mV mV mV mV mV CONDITIONS. IC=-100A IC=-100A IC=-10mA * IC=-100A, VEB=+1V IE=-100A VCB=-24V VEB=-4V VCE=-20V IC=-0.1A, IB=-1.0mA* IC=-0.5A, IB=-3mA* IC=-1A, IB=-7mA* IC=-2A, IB=-30mA* IC=-4A, IB=-140mA* IC=-4A, IB=-140mA* IC=-4A, VCE=-2V* IC=-10mA, VCE=-2V* IC=-0.5A, VCE=-2V* IC=-2A, VCE=-2V* IC=-5A, VCE=-2V* IC=-10A, VCE=-2V* Emitter-Base Breakdown V(BR)EBO Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector Emitter Cut-Off Current Collector-Emitter Saturation Voltage ICBO IEBO ICES VCE(sat) Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio VBE(sat) VBE(on) hFE 800 Transition Frequency Output Capacitance Switching Times fT Ccb ton toff MHz pF ns ns IC=-50mA, VCE=-10V f=50MHz VCB=- 10V, f= 1MHz IC=-4A, IB=-40mA, VCC=-10V IC=-4A, IB=40mA, VCC=-10V *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2%. FZT1149A TYPICAL CHARACTERISTICS 1.0 +25C 1.0 IC/IB=100 0.8 0.8 IC/IB=10 IC/IB=50 IC/IB=100 IC/IB=200 VCE(sat) - (V) VCE(sat) - (V) 0.6 0.6 -55C +25C +100C 0.4 0.4 0.2 0.2 0 1m 10m 100m 1 10 100 0 1m 10m 100m 1 10 100 IC - Collector Current (A) IC - Collector Current (A) VCE(sat) v IC VCE(sat) v IC 750 VCE=2V 1.6 IC/IB=100 hFE - Typical Gain 500 VBE(sat) - (V) +100C +25C -55C 1.2 0.8 250 0.4 -55C +25C +100C 0 1m 10m 100m 1 10 100 0 1m 10m 100m 1 10 100 IC - Collector Current (A) IC - Collector Current (A) hFE v IC VBE(sat) v IC 1.2 VCE=2V 10 0.8 IC - Collector Current (A) VBE(on) - (V) 1 DC 1s 100ms 10ms 1ms 100us 0.4 -55C +25C +100C 100m 0 1m 10m 100m 1 10 100 10m 100m 1 10 100 IC - Collector Current (A) VCE - Collector Emitter Voltage (V) VBE(on) v IC Safe Operating Area FZT1149A THERMAL CHARACTERISTICS 4 Thermal Resistance (C/W) 50 40 D=1 t1 D=t1 tP tP Max Power Dissipation - (Watts) 3 30 20 10 0 100s D=0.5 D=0.2 D=0.1 D=0.05 Single Pulse 2 1 0 0 20 40 60 80 100 120 140 160 1ms 10ms 100ms 1s 10s 100s Pulse Width T - Ambient Temperature (C) Transient Thermal Resistance Derating curve SPICE PARAMETERS *ZETEX FZT1149A Spice model Last revision 10/1/97 * .MODEL FZT1149A PNP IS =9.5e-13 NF=1.002 ISE=1.2e-13 NE =1.4 + BF =520 VAF=24.97 IKF=5 NR =0.997 + ISC=4.5E-13 NC =1.25 BR = 40 VAR=2.51 IKR=0.7 + RE =20e-3 RB =150e-3 RC =10e-3 CJE=490e-12 + CJC=150e-12 VJC=1.094 MJC= 0.4739 TF =1e-9 TR = 3.5e-9 * * (c) 1995 ZETEX PLC The copyright in this model and the design embodied belong to Zetex PLC ("Zetex"). It is supplied free of charge by Zetex for the purpose of research and design and may be used or copied intact (including this notice) for that purpose only. All other rights are reserved. The model is believed accurate but no condition or warranty as to its merchantability or fitness for purpose is given and no liability in respect of any use is accepted by Zetex PLC, its distributors or agents. |
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